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SQJQ140E-T1_GE3
SQJQ140E-T1_GE3
MOSFETs SQJQ140E-T1_GE3
Vishay
SQJQ140E-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
EU RoHSCompliant
ECCN (US)EAR99
PackagingTape and Reel
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Product CategoryPower MOSFET
Process TechnologyTrenchFET
Typical Fall Time (ns)32
Typical Rise Time (ns)78
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)600000
Typical Gate Charge @ 10V (nC)192
Typical Gate Charge @ Vgs (nC)192@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)26
Maximum Drain Source Voltage (V)40
Typical Turn-Off Delay Time (ns)62
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)701
Typical Input Capacitance @ Vds (pF)12140@25V
Maximum Drain Source Resistance (MOhm)0.53@10V
Description
Trans MOSFET N-CH 40V 701A T/R
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