Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | Unknown |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Automotive | Yes |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
Product Category | Power MOSFET |
Process Technology | TrenchFET Gen IV |
Typical Fall Time (ns) | 18 |
Typical Rise Time (ns) | 27 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 600000 |
Typical Gate Charge @ 10V (nC) | 116 |
Typical Gate Charge @ Vgs (nC) | 116@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 17 |
Maximum Drain Source Voltage (V) | 40 |
Typical Turn-Off Delay Time (ns) | 41 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 575 |
Typical Input Capacitance @ Vds (pF) | 7220@25V |
Maximum Drain Source Resistance (mOhm) | 0.9@10V |
Description |