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SQJQ466E-T1_GE3
SQJQ466E-T1_GE3
MOSFETs SQJQ466E-T1_GE3
Vishay
SQJQ466E-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveYes
PCB changed4
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width6.22
Package Height1.8
Package Length7.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK
Typical Fall Time (ns)15
Typical Rise Time (ns)8
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)135
Typical Gate Charge @ Vgs (nC)135@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)47
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)200
Typical Input Capacitance @ Vds (pF)8170@25V
Maximum Drain Source Resistance (MOhm)1.9@10V
Description
Trans MOSFET N-CH 60V 200A Automotive 5-Pin(4+Tab) PowerPAK T/R
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