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SQM120N02-1M3L_GE3
SQM120N02-1M3L_GE3
MOSFETs SQM120N02-1M3L_GE3
Vishay
SQM120N02-1M3L_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveYes
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)12
Typical Rise Time (ns)11
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)192
Typical Gate Charge @ Vgs (nC)192@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)64
Maximum Gate Threshold Voltage (V)2.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)11538@10V
Maximum Drain Source Resistance (mOhm)1.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 20V 120A Automotive 3-Pin(2+Tab) D2PAK
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