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MOSFETs SQM200N04-1M1L-GE3
Vishay
SQM200N04-1M1L-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quint Source |
| Product Category | Power MOSFET |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Typical Fall Time (ns) | 126 |
| Typical Rise Time (ns) | 12 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ 10V (nC) | 275 |
| Typical Gate Charge @ Vgs (nC) | 275@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 13 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 443 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 200 |
| Typical Input Capacitance @ Vds (pF) | 16524@25V |
| Maximum Drain Source Resistance (mOhm) | 1.1@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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