Product Attribute | Attribute Value |
Tab | Tab |
PPAP | Unknown |
EU RoHS | Compliant with Exemption |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | Yes |
PCB changed | 3 |
Part Status | LTB |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 4.65(Max) |
Package Height | 9.01(Max) |
Package Length | 10.51(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-220 |
Maximum IDSS (uA) | 1 |
Process Technology | TrenchFET |
Typical Fall Time (ns) | 12 |
Typical Rise Time (ns) | 110 |
Supplier Temperature Grade | Automotive |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 250000 |
Typical Gate Charge @ 10V (nC) | 125 |
Typical Gate Charge @ Vgs (nC) | 125@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 16 |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 40 |
Maximum Gate Threshold Voltage (V) | 3.5 |
Maximum Operating Temperature (°C) | 175 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 120 |
Typical Input Capacitance @ Vds (pF) | 5780@25V |
Maximum Drain Source Resistance (mOhm) | 3.8@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |