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MOSFETs SQUN702E-T1_GE3
Vishay
SQUN702E-T1_GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | Unknown |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 10 |
| Automotive | Yes |
| PCB changed | 10 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Triple |
| Product Category | Power MOSFET |
| Supplier Package | Triple die |
| Typical Fall Time (ns) | 10@N Channel 2|2@N Channel 3|19@P Channel 1 |
| Typical Rise Time (ns) | 12@N Channel 2|3@N Channel 3|9@P Channel 1 |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 3 |
| Maximum Power Dissipation (mW) | 48000@N Channel 2|60000@N Channel 3|48000@P Channel 1 |
| Typical Gate Charge @ 10V (nC) | 23@N Channel 2|14@N Channel 3|30.2@P Channel 1 |
| Typical Gate Charge @ Vgs (nC) | 23@10V@N Channel 2|14@10V@N Channel 3|30.2@10V@P Channel 1 |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 8@N Channel 2|10@N Channel 3|7@P Channel 1 |
| Maximum Drain Source Voltage (V) | 40@N Channel 2|200@N Channel 3|40@P Channel 1 |
| Typical Turn-Off Delay Time (ns) | 22@N Channel 2|15@N Channel 3|43@P Channel 1 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 30@N Channel 2|20@N Channel 3|30@P Channel 1 |
| Typical Input Capacitance @ Vds (pF) | 1474@20V@N Channel 2|1450@100V@N Channel 3|1302@20V@P Channel 1 |
| Maximum Drain Source Resistance (mOhm) | 9.2@10V@N Channel 2|60@10V@N Channel 3|30@10V@P Channel 1 |
| Description |
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