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SQV90N06-05-GE3
SQV90N06-05-GE3
MOSFETs SQV90N06-05-GE3
Vishay
SQV90N06-05-GE3
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveYes
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Standard Package NameI2PAK
Typical Fall Time (ns)28
Typical Rise Time (ns)18
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)175
Typical Gate Charge @ Vgs (nC)175@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)18
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)84
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)7190@25V
Maximum Drain Source Resistance (mOhm)5@10V
Description
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(3+Tab) TO-262
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