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STB20NM60D
STB20NM60D
MOSFETs STB20NM60D
STMicroelectronics
STB20NM60D
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Diodes, Transistors and Thyristors
MOSFETs
STB20NM60D.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)22
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)192000
Typical Gate Charge @ 10V (nC)37
Typical Gate Charge @ Vgs (nC)37@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)600
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)20
Typical Input Capacitance @ Vds (pF)1300@25V
Maximum Drain Source Resistance (mOhm)290@10V
Description
Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R
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