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STB30N80K5
STB30N80K5
MOSFETs STB30N80K5
STMicroelectronics
STB30N80K5
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Diodes, Transistors and Thyristors
MOSFETs
STB30N80K5.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyMdmesh K5
Standard Package NameTO-263
Typical Fall Time (ns)13.5
Typical Rise Time (ns)15
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)43
Typical Gate Charge @ Vgs (nC)43@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)800
Typical Turn-Off Delay Time (ns)100
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)24
Typical Input Capacitance @ Vds (pF)1530@100V
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 800V 24A 3-Pin(2+Tab) D2PAK T/R
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