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STB55NF06LT4
STB55NF06LT4
MOSFETs STB55NF06LT4
STMicroelectronics
STB55NF06LT4
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Diodes, Transistors and Thyristors
MOSFETs
STB55NF06LT4.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET II
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)20
Typical Rise Time (ns)100
Number of Elements per Chip1
Maximum Power Dissipation (mW)95000
Typical Gate Charge @ Vgs (nC)27@4.5V
Maximum Gate Source Voltage (V)±16
Typical Output Capacitance (pF)300
Typical Turn-On Delay Time (ns)20
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)40
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)10@4.5V
Minimum Gate Threshold Voltage (V)1
Typical Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)7
Typical Reverse Recovery Time (ns)80
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)55
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)1700@25V
Typical Reverse Recovery Charge (nC)200
Maximum Drain Source Resistance (MOhm)18@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)16
Maximum Pulsed Drain Current @ TC=25°C (A)220
Typical Reverse Transfer Capacitance @ Vds (pF)105@25V
Description
Trans MOSFET N-CH 60V 55A 3-Pin(2+Tab) D2PAK T/R
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