Tab | Tab |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 3 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 2 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 9.35(Max) |
Package Height | 4.6(Max) |
Package Length | 10.4(Max) |
Product Category | Power MOSFET |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 1 |
Process Technology | Mdmesh K5 |
Standard Package Name | TO-263 |
Typical Fall Time (ns) | 14.8 |
Typical Rise Time (ns) | 11.7 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 60000 |
Typical Gate Charge @ 10V (nC) | 5 |
Typical Gate Charge @ Vgs (nC) | 5@10V |
Maximum Gate Source Voltage (V) | ±30 |
Typical Output Capacitance (pF) | 15 |
Typical Turn-On Delay Time (ns) | 12.7 |
Maximum Drain Source Voltage (V) | 800 |
Typical Gate Plateau Voltage (V) | 5.4 |
Typical Turn-Off Delay Time (ns) | 23 |
Maximum Diode Forward Voltage (V) | 1.5 |
Typical Gate to Drain Charge (nC) | 2.9 |
Maximum Gate Threshold Voltage (V) | 5 |
Minimum Gate Threshold Voltage (V) | 3 |
Typical Gate Threshold Voltage (V) | 4 |
Typical Gate to Source Charge (nC) | 1.7 |
Typical Reverse Recovery Time (ns) | 265 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 4 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 177@100V |
Typical Reverse Recovery Charge (nC) | 1590 |
Maximum Drain Source Resistance (mOhm) | 1750@10V |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Positive Gate Source Voltage (V) | 30 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 16 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 0.3@100V |
Description | |