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STB6N80K5
STB6N80K5
MOSFETs STB6N80K5
STMicroelectronics
STB6N80K5
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Diodes, Transistors and Thyristors
MOSFETs
STB6N80K5.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.35(Max)
Package Height4.6(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologySuperMESH
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ 10V (nC)7.5
Typical Gate Charge @ Vgs (nC)7.5@10V
Maximum Gate Source Voltage (V)30
Maximum Drain Source Voltage (V)800
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.5
Typical Input Capacitance @ Vds (pF)270@100V
Maximum Drain Source Resistance (MOhm)1600@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 800V 4.5A 3-Pin(2+Tab) D2PAK T/R
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