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STD11NM60ND
STD11NM60ND
MOSFETs STD11NM60ND
STMicroelectronics
STD11NM60ND
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Diodes, Transistors and Thyristors
MOSFETs
STD11NM60ND.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Process TechnologyFDmesh II
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)9
Typical Rise Time (ns)7
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)30
Typical Gate Charge @ Vgs (nC)30@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)50
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)10
Typical Input Capacitance @ Vds (pF)850@50V
Maximum Drain Source Resistance (MOhm)450@10V
Description
Trans MOSFET N-CH 600V 10A 3-Pin(2+Tab) DPAK T/R
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