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STD17NF25
STD17NF25
MOSFETs STD17NF25
STMicroelectronics
STD17NF25
--
Diodes, Transistors and Thyristors
MOSFETs
STD17NF25.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologySTripFET
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8.8
Typical Rise Time (ns)17.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)90000
Typical Gate Charge @ 10V (nC)29.5
Typical Gate Charge @ Vgs (nC)29.5@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)178
Typical Turn-On Delay Time (ns)8.8
Maximum Drain Source Voltage (V)250
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)15.6@10V
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)4.8
Typical Reverse Recovery Time (ns)196
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1000@25V
Typical Reverse Recovery Charge (nC)1340
Maximum Drain Source Resistance (MOhm)165@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)68
Typical Reverse Transfer Capacitance @ Vds (pF)28@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 250V 17A 3-Pin(2+Tab) DPAK T/R
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