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STD3NM60N
STD3NM60N
MOSFETs STD3NM60N
STMicroelectronics
STD3NM60N
--
Diodes, Transistors and Thyristors
MOSFETs
STD3NM60N.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)1
Process TechnologyMDmesh
Standard Package NameTO-252
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)31
Typical Rise Time (ns)9.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)50000
Typical Gate Charge @ 10V (nC)9.5
Typical Gate Charge @ Vgs (nC)9.5@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)23
Maximum Diode Forward Voltage (V)1.6
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.3
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)188@50V
Maximum Drain Source Resistance (mOhm)1800@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)25
Description
Trans MOSFET N-CH 600V 3.3A 3-Pin(2+Tab) DPAK T/R
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