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STD9N65DM6AG
STD9N65DM6AG
MOSFETs STD9N65DM6AG
STMicroelectronics
STD9N65DM6AG
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Diodes, Transistors and Thyristors
MOSFETs
STD9N65DM6AG.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveYes
Lead ShapeGull-wing
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.2(Max)
Package Height2.4(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageDPAK
Maximum IDSS (uA)5
Process TechnologyMDmesh DM6
Standard Package NameTO-252
Typical Fall Time (ns)10
Typical Rise Time (ns)3.6
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)89000
Typical Gate Charge @ 10V (nC)11.7
Typical Gate Charge @ Vgs (nC)11.7@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)7.8
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)27
Maximum Gate Threshold Voltage (V)4.75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)9
Typical Input Capacitance @ Vds (pF)510@100V
Maximum Drain Source Resistance (mOhm)440@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 650V 9A Automotive 3-Pin(2+Tab) DPAK T/R
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