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MOSFETs STE180NE10
STMicroelectronics
STE180NE10
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Screw |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 4 |
| Automotive | No |
| PCB changed | 4 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Dual Source |
| Package Width | 25.5(Max) |
| Package Height | 9.1(Max) |
| Package Length | 38.2(Max) |
| Product Category | Power MOSFET |
| Supplier Package | ISOTOP |
| Process Technology | STripFET |
| Standard Package Name | ISOTOP |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 440 |
| Typical Rise Time (ns) | 600 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 360000 |
| Typical Gate Charge @ 10V (nC) | 585 |
| Typical Gate Charge @ Vgs (nC) | 585@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 100 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 430 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 180 |
| Typical Input Capacitance @ Vds (pF) | 21@25V |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Description |
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