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STE53NA50
STE53NA50
MOSFETs STE53NA50
STMicroelectronics
STE53NA50
--
Diodes, Transistors and Thyristors
MOSFETs
STE53NA50.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
MountingScrew
ECCN (US)EAR99
Pin Count4
AutomotiveNo
PCB changed4
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width25.5(Max)
Package Height9.1(Max)
Package Length38.2(Max)
Product CategoryPower MOSFET
Supplier PackageISOTOP
Standard Package NameISOTOP
Typical Fall Time (ns)36
Typical Rise Time (ns)92
Number of Elements per Chip1
Maximum Power Dissipation (mW)460000
Typical Gate Charge @ 10V (nC)470
Typical Gate Charge @ Vgs (nC)470@10V
Maximum Gate Source Voltage (V)±30
Maximum Drain Source Voltage (V)500
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)53
Typical Input Capacitance @ Vds (pF)13000@25V
Maximum Drain Source Resistance (mOhm)85@10V
Description
Trans MOSFET N-CH 500V 53A 4-Pin ISOTOP
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