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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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STH260N6F6-6
STH260N6F6-6
MOSFETs STH260N6F6-6
STMicroelectronics
STH260N6F6-6
--
Diodes, Transistors and Thyristors
MOSFETs
STH260N6F6-6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeGull-wing
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width8.9(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)62.6
Typical Rise Time (ns)165
Number of Elements per Chip1
Maximum Power Dissipation (mW)300000
Typical Gate Charge @ 10V (nC)138
Typical Gate Charge @ Vgs (nC)183@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)31.4
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)144.4
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)11800@25V
Maximum Drain Source Resistance (mOhm)2.4@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) H2PAK T/R
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