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STM8S003F3P6TRATMEGA48PA-AUAT24C512C-SSHD-TSTM32L031G6U6TPS74801DRCR
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STH315N10F7-6
STH315N10F7-6
MOSFETs STH315N10F7-6
STMicroelectronics
STH315N10F7-6
--
Diodes, Transistors and Thyristors
MOSFETs
STH315N10F7-6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveYes
Lead ShapeGull-wing
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width8.9(Max)
Package Height4.8(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageH2PAK
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)40
Typical Rise Time (ns)108
Supplier Temperature GradeAutomotive
Number of Elements per Chip1
Maximum Power Dissipation (mW)315000
Typical Gate Charge @ 10V (nC)180
Typical Gate Charge @ Vgs (nC)180@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)62
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)148
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)180
Typical Input Capacitance @ Vds (pF)12800@25V
Maximum Drain Source Resistance (MOhm)2.3@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 180A Automotive 7-Pin(6+Tab) H2PAK T/R
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