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STI18N65M5
STI18N65M5
MOSFETs STI18N65M5
STMicroelectronics
STI18N65M5
--
Diodes, Transistors and Thyristors
MOSFETs
STI18N65M5.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.75
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.4
Package Height8.95
Package Length10
Product CategoryPower MOSFET
Supplier PackageI2PAK
Maximum IDSS (uA)1
Process TechnologyMDmesh
Standard Package NameI2PAK
SVHC Exceeds ThresholdYes
Number of Elements per Chip1
Maximum Power Dissipation (mW)110000
Typical Gate Charge @ 10V (nC)31
Typical Gate Charge @ Vgs (nC)31@10V
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)650
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)15
Typical Input Capacitance @ Vds (pF)1240@100V
Maximum Drain Source Resistance (MOhm)220@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 650V 15A 3-Pin(3+Tab) I2PAK Tube
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