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MOSFETs STI6N80K5
STMicroelectronics
STI6N80K5
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.4 |
| Package Height | 8.95 |
| Package Length | 10 |
| Product Category | Power MOSFET |
| Supplier Package | I2PAK |
| Maximum IDSS (uA) | 1 |
| Process Technology | SuperMESH |
| Standard Package Name | I2PAK |
| SVHC Exceeds Threshold | Yes |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 110000 |
| Typical Gate Charge @ 10V (nC) | 7.5 |
| Typical Gate Charge @ Vgs (nC) | 7.5@10V |
| Maximum Gate Source Voltage (V) | 30 |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.5 |
| Typical Input Capacitance @ Vds (pF) | 270@100V |
| Maximum Drain Source Resistance (mOhm) | 1600@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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