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STL100N12F7
STL100N12F7
MOSFETs STL100N12F7
STMicroelectronics
STL100N12F7
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Diodes, Transistors and Thyristors
MOSFETs
STL100N12F7.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusCustom
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Height0.95(Max)
Product CategoryPower MOSFET
Supplier PackagePower Flat EP
Maximum IDSS (uA)1
Process TechnologySTripFET F7
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)20
Typical Rise Time (ns)12.6
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)136000
Typical Gate Charge @ 10V (nC)46
Typical Gate Charge @ Vgs (nC)46@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)25
Maximum Drain Source Voltage (V)120
Typical Turn-Off Delay Time (ns)38
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)100
Typical Input Capacitance @ Vds (pF)3300@60V
Maximum Drain Source Resistance (MOhm)7.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 120V 100A 8-Pin Power Flat EP T/R
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