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STL12HN65M2
STL12HN65M2
MOSFETs STL12HN65M2
STMicroelectronics
STL12HN65M2
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Diodes, Transistors and Thyristors
MOSFETs
STL12HN65M2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width6
Package Height0.95(Max)
Package Length5
Product CategoryPower MOSFET
Supplier PackagePower Flat EP
Typical Fall Time (ns)13.5
Typical Rise Time (ns)7
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)52000
Typical Gate Charge @ 10V (nC)16.7
Typical Gate Charge @ Vgs (nC)16.7@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)9
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)34
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)535@100V
Maximum Drain Source Resistance (mOhm)550@10V
Description
Trans MOSFET N-CH 650V 6A 8-Pin Power Flat EP T/R
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