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STL13DP10F6
STL13DP10F6
MOSFETs STL13DP10F6
STMicroelectronics
STL13DP10F6
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Diodes, Transistors and Thyristors
MOSFETs
STL13DP10F6.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual
Package Width6
Package Height0.81
Package Length5
Product CategoryPower MOSFET
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologySTripFET
Number of Elements per Chip2
Maximum Power Dissipation (mW)62500
Typical Gate Charge @ 10V (nC)17
Typical Gate Charge @ Vgs (nC)17@10V
Maximum Gate Source Voltage (V)±20
Maximum Drain Source Voltage (V)100
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Typical Input Capacitance @ Vds (pF)864@25V
Maximum Drain Source Resistance (mOhm)180@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 100V 13A 8-Pin Power Flat T/R
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