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STL33N60M2
STL33N60M2
MOSFETs STL33N60M2
STMicroelectronics
STL33N60M2
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Diodes, Transistors and Thyristors
MOSFETs
STL33N60M2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count5
AutomotiveNo
Lead ShapeNo Lead
PCB changed5
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Triple Source
Package Width8
Package Height0.88
Package Length8
Product CategoryPower MOSFET
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologyMDmesh
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)47
Typical Gate Charge @ Vgs (nC)47@10V
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)600
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)22
Typical Input Capacitance @ Vds (pF)1781@100V
Maximum Drain Source Resistance (mOhm)135@10V
Maximum Gate Source Leakage Current (nA)10000
Description
Trans MOSFET N-CH 600V 22A 5-Pin Power Flat T/R
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