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STL60N10F7
STL60N10F7
MOSFETs STL60N10F7
STMicroelectronics
STL60N10F7
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Diodes, Transistors and Thyristors
MOSFETs
STL60N10F7.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeNo Lead
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Height0.95(Max)
Package Length5.2
Product CategoryPower MOSFET
Supplier PackagePower Flat
Maximum IDSS (uA)1
Process TechnologySTripFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8
Typical Rise Time (ns)17
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)72000
Typical Gate Charge @ 10V (nC)25
Typical Gate Charge @ Vgs (nC)25@10V
Maximum Gate Source Voltage (V)20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24
Maximum Gate Threshold Voltage (V)4.5
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)46
Typical Input Capacitance @ Vds (pF)1640@50V
Maximum Drain Source Resistance (mOhm)18@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 100V 46A 8-Pin Power Flat T/R
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