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STO67N60M6
STO67N60M6
MOSFETs STO67N60M6
STMicroelectronics
STO67N60M6
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Diodes, Transistors and Thyristors
MOSFETs
STO67N60M6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count9
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Hex Source
Package Width10.38
Package Height2.3
Package Length9.9
Product CategoryPower MOSFET
Supplier PackageTO-LL HV
Maximum IDSS (uA)1
Process TechnologyMDmesh DM6
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)10.5
Typical Rise Time (ns)35
Number of Elements per Chip1
Maximum Power Dissipation (mW)150000
Typical Gate Charge @ 10V (nC)72.5
Typical Gate Charge @ Vgs (nC)72.5@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)24.5
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)72
Maximum Gate Threshold Voltage (V)4.75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)34
Typical Input Capacitance @ Vds (pF)3400@100V
Maximum Drain Source Resistance (mOhm)54@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 600V 34A 9-Pin(8+Tab) TO-LL HV T/R
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