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MOSFETs STP33N65M2
STMicroelectronics
STP33N65M2
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.6(Max) |
| Package Height | 9.15(Max) |
| Package Length | 10.4(Max) |
| Product Category | Power MOSFET |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | MDmesh M2 |
| Standard Package Name | TO-220 |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 9 |
| Typical Rise Time (ns) | 11.5 |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 190000 |
| Typical Gate Charge @ 10V (nC) | 41.5 |
| Typical Gate Charge @ Vgs (nC) | 41.5@10V |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Output Capacitance (pF) | 75 |
| Typical Turn-On Delay Time (ns) | 13.5 |
| Maximum Drain Source Voltage (V) | 650 |
| Typical Gate Plateau Voltage (V) | 4.9 |
| Typical Turn-Off Delay Time (ns) | 72.5 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Typical Gate to Drain Charge (nC) | 18 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate Threshold Voltage (V) | 3 |
| Typical Gate to Source Charge (nC) | 6.8 |
| Typical Reverse Recovery Time (ns) | 544 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 24 |
| Operating Junction Temperature (°C) | 150 |
| Typical Input Capacitance @ Vds (pF) | 1790@100V |
| Typical Reverse Recovery Charge (nC) | 10000 |
| Maximum Drain Source Resistance (MOhm) | 140@10V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Positive Gate Source Voltage (V) | 25 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 96 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 2@100V |
| Description |
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