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STP3N150
STP3N150
MOSFETs STP3N150
STMicroelectronics
STP3N150
--
Diodes, Transistors and Thyristors
MOSFETs
STP3N150.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220
Maximum IDSS (uA)10
Process TechnologyPowerMesh
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)61
Typical Rise Time (ns)47
Supplier Temperature GradeIndustrial
Number of Elements per Chip1
Maximum Power Dissipation (mW)140000
Typical Gate Charge @ 10V (nC)29.3
Typical Gate Charge @ Vgs (nC)29.3@10V
Maximum Gate Source Voltage (V)±30
Typical Output Capacitance (pF)102
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)1500
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)45
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)17
Maximum Gate Threshold Voltage (V)5
Minimum Gate Threshold Voltage (V)3
Typical Gate Threshold Voltage (V)4
Typical Gate to Source Charge (nC)4.6
Typical Reverse Recovery Time (ns)410
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.5
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)939@25V
Typical Reverse Recovery Charge (nC)2400
Maximum Drain Source Resistance (mOhm)9000@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)30
Maximum Pulsed Drain Current @ TC=25°C (A)10
Typical Reverse Transfer Capacitance @ Vds (pF)13.2@25V
Description
Trans MOSFET N-CH 1.5KV 2.5A 3-Pin(3+Tab) TO-220 Tube
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