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STRH8N10N1
STRH8N10N1
MOSFETs STRH8N10N1
STMicroelectronics
STRH8N10N1
--
Diodes, Transistors and Thyristors
MOSFETs
STRH8N10N1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSSupplier Unconfirmed
Diameter9.4(Max)
MountingThrough Hole
ECCN (US)EAR99
PackagingStrip
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Height6.6(Max)
Product CategoryPower MOSFET
Supplier PackageTO-39
Standard Package NameTO-205-AF
Typical Fall Time (ns)5.5
Typical Rise Time (ns)10.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2400
Typical Gate Charge @ Vgs (nC)18.5@12V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)10.5
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)21.5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)659@25V
Maximum Drain Source Resistance (mOhm)300@12V
Description
Trans MOSFET N-CH 100V 6A 3-Pin TO-39 Strip
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