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MOSFETs STS8C5H30L
STMicroelectronics
STS8C5H30L
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | LTB |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.65(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SO N |
| Process Technology | StripFET III |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8@N Channel|35@P Channel |
| Typical Rise Time (ns) | 14.5@N Channel|35@P Channel |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1600 |
| Typical Gate Charge @ Vgs (nC) | 7@5V@N Channel|12.5@5V@P Channel |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 12@N Channel|25@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 23@N Channel|125@P Channel |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8@N Channel|5.4@P Channel |
| Typical Input Capacitance @ Vds (pF) | 857@25V@N Channel|1350@25V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 22@10V@N Channel|55@10V@P Channel |
| Description |
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