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MOSFETs STS9D8NH3LL
STMicroelectronics
STS9D8NH3LL
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.65(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SO N |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 8@Q 1|8.5@Q 2 |
| Typical Rise Time (ns) | 14.5@Q 1|32@Q 2 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ Vgs (nC) | 7@5V|9@5V |
| Maximum Gate Source Voltage (V) | ±16 |
| Typical Turn-On Delay Time (ns) | 12@Q 1|15@Q 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 23@Q 1|18@Q 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8@Q 1|9@Q 2 |
| Typical Input Capacitance @ Vds (pF) | 857@25V|965@25V |
| Maximum Drain Source Resistance (mOhm) | 15@10V@Q 2|22@10V@Q 1 |
| Description |
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