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STU5N65M6
STU5N65M6
MOSFETs STU5N65M6
STMicroelectronics
STU5N65M6
--
Diodes, Transistors and Thyristors
MOSFETs
STU5N65M6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Maximum IDSS (uA)1
Process TechnologyMDmesh M6
Typical Fall Time (ns)15.2
Typical Rise Time (ns)5.9
Number of Elements per Chip1
Maximum Power Dissipation (mW)45000
Typical Gate Charge @ 10V (nC)5.1
Typical Gate Charge @ Vgs (nC)5.1@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)6.5
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)17.4
Maximum Gate Threshold Voltage (V)3.75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4
Typical Input Capacitance @ Vds (pF)170@100V
Maximum Drain Source Resistance (MOhm)1300@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) IPAK Tube
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