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STU7N60DM2
STU7N60DM2
MOSFETs STU7N60DM2
STMicroelectronics
STU7N60DM2
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Diodes, Transistors and Thyristors
MOSFETs
STU7N60DM2.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width2.4(Max)
Package Height6.2(Max)
Package Length6.6(Max)
Product CategoryPower MOSFET
Supplier PackageIPAK
Typical Fall Time (ns)22.6
Typical Rise Time (ns)6
Number of Elements per Chip1
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ 10V (nC)7.5
Typical Gate Charge @ Vgs (nC)7.5@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)12.6
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6
Typical Input Capacitance @ Vds (pF)324@100V
Maximum Drain Source Resistance (mOhm)900@10V
Description
Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) IPAK Tube
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