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STW33N60M6
STW33N60M6
MOSFETs STW33N60M6
STMicroelectronics
STW33N60M6
--
Diodes, Transistors and Thyristors
MOSFETs
STW33N60M6.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)1
Process TechnologyMDmesh M6
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)7.5
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Power Dissipation (mW)190000
Typical Gate Charge @ 10V (nC)33.4
Typical Gate Charge @ Vgs (nC)33.4@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)19.5
Maximum Drain Source Voltage (V)600
Typical Turn-Off Delay Time (ns)38.5
Maximum Gate Threshold Voltage (V)4.75
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)25
Typical Input Capacitance @ Vds (pF)1515@100V
Maximum Drain Source Resistance (mOhm)125@10V
Maximum Gate Source Leakage Current (nA)5000
Description
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
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