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STW56NM60ND
STW56NM60ND
MOSFETs STW56NM60ND
STMicroelectronics
STW56NM60ND
--
Diodes, Transistors and Thyristors
MOSFETs
STW56NM60ND.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width5.15(Max)
Package Height20.15(Max)
Package Length15.75(Max)
Product CategoryPower MOSFET
Supplier PackageTO-247
Maximum IDSS (uA)1
Process TechnologyFDmesh
Standard Package NameTO-247
Number of Elements per Chip1
Maximum Power Dissipation (mW)390000
Maximum Gate Source Voltage (V)±25
Maximum Drain Source Voltage (V)600
Maximum Gate Threshold Voltage (V)5
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)50
Typical Input Capacitance @ Vds (pF)5000@50V
Maximum Drain Source Resistance (mOhm)60@10V
Maximum Gate Source Leakage Current (nA)150
Description
Trans MOSFET N-CH 600V 50A 3-Pin(3+Tab) TO-247 Tube
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