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MOSFETs STW68N65DM6-4AG
STMicroelectronics
STW68N65DM6-4AG
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveYes
Lead ShapeThrough Hole
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageTO-247
Typical Fall Time (ns)10
Typical Rise Time (ns)16
Number of Elements per Chip1
Maximum Power Dissipation (mW)480000
Typical Gate Charge @ Vgs (nC)118@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)34
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)92
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)72
Typical Input Capacitance @ Vds (pF)5900@100V
Maximum Drain Source Resistance (mOhm)39@10V
Description
Trans MOSFET N-CH 650V 72A Automotive 4-Pin(4+Tab) TO-247 Tube
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