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MOSFETs STY100NM60N
STMicroelectronics
STY100NM60N
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.7 |
| Package Height | 19.7 |
| Package Length | 15.3 |
| Product Category | Power MOSFET |
| Supplier Package | Max247 |
| Maximum IDSS (uA) | 10 |
| Process Technology | MDmesh |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 81 |
| Typical Rise Time (ns) | 52 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 625000 |
| Typical Gate Charge @ 10V (nC) | 330 |
| Typical Gate Charge @ Vgs (nC) | 330@10V |
| Maximum Gate Source Voltage (V) | 25 |
| Typical Turn-On Delay Time (ns) | 45 |
| Maximum Drain Source Voltage (V) | 600 |
| Typical Turn-Off Delay Time (ns) | 372 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 98 |
| Typical Input Capacitance @ Vds (pF) | 9600@50V |
| Maximum Drain Source Resistance (mOhm) | 29@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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