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SUD50P10-43L-BE3
SUD50P10-43L-BE3
MOSFETs SUD50P10-43L-BE3
Vishay
SUD50P10-43L-BE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width6.22(Max)
Package Height2.38(Max)
Package Length6.73(Max)
Product CategoryPower MOSFET
Supplier PackageTO-252AA
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Typical Fall Time (ns)100
Typical Rise Time (ns)20|160
Number of Elements per Chip1
Maximum Power Dissipation (mW)8300
Typical Gate Charge @ 10V (nC)106
Typical Gate Charge @ Vgs (nC)106@10V|54@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)230
Typical Turn-On Delay Time (ns)15|42
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)3
Typical Turn-Off Delay Time (ns)100|110
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.8
Typical Gate to Drain Charge (nC)26
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)14
Typical Reverse Recovery Time (ns)60
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.2
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4600@50V
Typical Reverse Recovery Charge (nC)150
Maximum Drain Source Resistance (mOhm)43@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)40
Maximum Power Dissipation on PCB @ TC=25°C (W)8.3
Typical Reverse Transfer Capacitance @ Vds (pF)175@50V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)9.2
Description
Trans MOSFET P-CH 100V 8.2A 3-Pin(2+Tab) TO-252AA T/R
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