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SUM60030E-GE3
SUM60030E-GE3
MOSFETs SUM60030E-GE3
Vishay
SUM60030E-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed2
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)1
Process TechnologyTrenchFET
Standard Package NameTO-263
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)14
Typical Rise Time (ns)24
Number of Elements per Chip1
Maximum Power Dissipation (mW)375000
Typical Gate Charge @ 10V (nC)94
Typical Gate Charge @ Vgs (nC)94@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)24
Maximum Drain Source Voltage (V)80
Typical Turn-Off Delay Time (ns)34
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)120
Typical Input Capacitance @ Vds (pF)7910@40V
Maximum Drain Source Resistance (mOhm)3.2@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 80V 120A 3-Pin(2+Tab) D2PAK
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