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MOSFETs SUM70030M-GE3
Vishay
SUM70030M-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Source |
| Product Category | Power MOSFET |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 13 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 375000 |
| Typical Gate Charge @ Vgs (nC) | 142.4@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 100 |
| Typical Turn-Off Delay Time (ns) | 50 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 150 |
| Typical Input Capacitance @ Vds (pF) | 10870@50V |
| Maximum Drain Source Resistance (mOhm) | 3.5@10V |
| Description |
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