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MOSFETs TC6215TG-G
Microchip Technology
TC6215TG-G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual |
| Package Width | 3.8 |
| Package Height | 1.65(Max) |
| Package Length | 4.9 |
| Supplier Package | SOIC |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 11.3@N Channel|11.1@P Channel |
| Typical Rise Time (ns) | 2.3 |
| Number of Elements per Chip | 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2.4@P Channel|2.5@N Channel |
| Maximum Drain Source Voltage (V) | 150 |
| Typical Turn-Off Delay Time (ns) | 17.2@N Channel|16.2@P Channel |
| Maximum Gate Threshold Voltage (V) | 150 |
| Typical Gate Threshold Voltage (V) | 2V @ 1mA |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | - 1.5 A|3.8 A |
| Typical Input Capacitance @ Vds (pF) | 120@25V@N Channel|127@25V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 4000@10V@N Channel|7000@10V@P Channel |
| Description |
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