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MOSFETs TC6320K6-G
Microchip Technology
TC6320K6-G
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P|N |
| Configuration | Dual Dual Drain |
| Package Width | 3.91 |
| Package Height | 1.37 |
| Package Length | 4.89 |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Maximum IDSS (uA) | 10 |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 15 |
| Typical Rise Time (ns) | 15 |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 200 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Typical Gate Threshold Voltage (V) | 2V @ 1mA |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 1 A |
| Typical Input Capacitance @ Vds (pF) | 200(Max)@25V@P Channel|110(Max)@25V@N Channel |
| Maximum Drain Source Resistance (MOhm) | 8000@10V@P Channel|7000@10V@N Channel |
| Description |
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