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TC6320TG-G
TC6320TG-G
MOSFETs TC6320TG-G
Microchip Technology
TC6320TG-G
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Diodes, Transistors and Thyristors
MOSFETs
TC6320TG-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3.9
Package Height1.65(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)10
Standard Package NameSO
Typical Fall Time (ns)15
Typical Rise Time (ns)15
Number of Elements per Chip2
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Input Capacitance @ Vds (pF)110(Max)@25V@N Channel|200(Max)@25V@P Channel
Maximum Drain Source Resistance (mOhm)7000@10V@N Channel|8000@10V@P Channel
Description
Trans MOSFET N/P-CH Si 200V 8-Pin SOIC N T/R
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