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TP2435N8-G
TP2435N8-G
MOSFETs TP2435N8-G
Microchip Technology
TP2435N8-G
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Diodes, Transistors and Thyristors
MOSFETs
TP2435N8-G.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count4
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Dual Drain
Package Width2.6(Max)
Package Height1.6(Max)
Package Length4.6(Max)
Product CategoryPower MOSFET
Supplier PackageSOT-89
Maximum IDSS (uA)10
Process TechnologyDMOS
Typical Fall Time (ns)50(Max)
Typical Rise Time (ns)20(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)1600
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15(Max)
Maximum Drain Source Voltage (V)350
Typical Turn-Off Delay Time (ns)25(Max)
Maximum Gate Threshold Voltage (V)2.4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.231
Typical Input Capacitance @ Vds (pF)200(Max)@25V
Maximum Drain Source Resistance (MOhm)15000@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 350V 0.231A 4-Pin(3+Tab) SOT-89 T/R
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