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TPS1120DG4
TPS1120DG4
MOSFETs TPS1120DG4
Texas Instruments
TPS1120DG4
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSCompliant
MaterialSi
MountingSurface Mount
PackagingTube
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width3.98(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategorySmall Signal
Supplier PackageSOIC
Standard Package NameSOP
Typical Fall Time (ns)2
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)840
Typical Gate Charge @ 10V (nC)5.45
Typical Gate Charge @ Vgs (nC)5.45@10V
Maximum Gate Source Voltage (V)2
Typical Turn-On Delay Time (ns)4.5
Maximum Drain Source Voltage (V)15
Typical Turn-Off Delay Time (ns)13
Maximum Operating Temperature (°C)125
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)1.17
Maximum Drain Source Resistance (mOhm)400@4.5V
Description
Trans MOSFET P-CH Si 15V 1.17A 8-Pin SOIC Tube
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