Product Attribute | Attribute Value |
PPAP | No |
SVHC | Yes |
EU RoHS | Compliant with Exemption |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 2.3 |
Package Height | 0.78(Max) |
Package Length | 2.9 |
Product Category | Power MOSFET |
Supplier Package | SOT-28FL |
Maximum IDSS (uA) | 1 |
Process Technology | TMOS |
SVHC Exceeds Threshold | Yes |
Typical Fall Time (ns) | 22@N Channel|36@P Channel |
Typical Rise Time (ns) | 7.5@N Channel|9.8@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1000 |
Typical Gate Charge @ 10V (nC) | 11@P Channel|10@N Channel |
Typical Gate Charge @ Vgs (nC) | 10@10V@N Channel|11@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 7.3@N Channel|6.4@P Channel |
Maximum Drain Source Voltage (V) | 60 |
Typical Turn-Off Delay Time (ns) | 41@N Channel|65@P Channel |
Maximum Gate Threshold Voltage (V) | 2.6 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3@N Channel|2.5@P Channel |
Typical Input Capacitance @ Vds (pF) | 505@20V@N Channel|420@20V@P Channel |
Maximum Drain Source Resistance (mOhm) | 80@10V@N Channel|137@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 10000 |
Description |