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MOSFETs VEC2616-TL-H-Z-W
onsemi
VEC2616-TL-H-Z-W
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Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 2.3 |
| Package Height | 0.78(Max) |
| Package Length | 2.9 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-28FL |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Typical Fall Time (ns) | 22@N Channel|36@P Channel |
| Typical Rise Time (ns) | 7.5@N Channel|9.8@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 1000 |
| Typical Gate Charge @ 10V (nC) | 10@N Channel|11@P Channel |
| Typical Gate Charge @ Vgs (nC) | 10@10V@N Channel|11@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 7.3@N Channel|6.4@P Channel |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 41@N Channel|65@P Channel |
| Maximum Gate Threshold Voltage (V) | 2.6 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3@N Channel|2.5@P Channel |
| Typical Input Capacitance @ Vds (pF) | 505@20V@N Channel|420@20V@P Channel |
| Maximum Drain Source Resistance (MOhm) | 80@10V@N Channel|137@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Description |
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